s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t n- ch an n el m osf et irf 540ns ( k r f5 4 0 n s ) f e a tu r e s v d s ( v ) = 1 0 0 v i d = 3 3 a ( v g s = 1 0 v ) r d s ( o n ) 4 4 m ( v g s = 1 0 v ) f a s t s w i t c h i n g 9.65 (min) 10.67 (max) 5.33 (min) 90 ~ 93 b b 6.22 (min) 1.65 (max) 9.65 (max) 8.51 (min) 1.27~1.78 1.14 (min) 1.40 (max) 4.06 (min) 4.83 (max) 0.43~0.63 0.51~0.99 1.14~1.40 15.88 (max) 14.61 (min) 2.54 to-263 unit:mm s d g a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 1 0 0 v g s 2 0 t a = 2 5 3 3 t a = 7 0 2 3 i d m 1 1 0 i a r 1 6 a e a r 1 3 m j d v / d t 7 v / n s p o w e r d i s s i p a t i o n t c = 2 5 p d 1 3 0 w 0 . 8 7 w / r t h ja 4 0 r t h jc 1 . 1 5 t j 1 7 5 t st g - 5 5 t o 1 7 5 l i n e a r d e r a t i n g f a c t o r a v a l a n c h e c u r r e n t p e a k d i o d e r e c o v e r y d v / d t r e p e t i t i v e a v a l a n c h e e n e r g y v a p u l s e d d r a i n c u r r e n t p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e / w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - c a s e 1 gate 3 source 2 drain
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t n- ch an n el m osf et irf 540ns ( k r f5 4 0 n s ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 1 0 0 v v d s = 1 0 0 v , v g s = 0 v 2 5 v d s = 8 0 v , v g s = 0 v , t j = 1 5 0 2 5 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 2 4 v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) v g s = 1 0 v , i d = 1 6 a (note.1) 4 4 m f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 0 v , i d = 1 6 a (note.1) 2 1 s i n p u t c a p a c i t a n c e c i ss 1 9 6 0 o u t p u t c a p a c i t a n c e c o ss 2 5 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 4 0 t o t a l g a t e c h a r g e q g 7 1 g a t e s o u r c e c h a r g e q g s 1 4 g a t e d r a i n c h a r g e q g d 2 1 t u r n - o n d e l a y t i m e t d ( o n ) 1 1 t u r n - o n r i s e t i m e t r 3 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 3 9 t u r n - o f f f a l l t i m e t f 3 5 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 1 1 5 1 7 0 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 5 0 5 7 6 0 n c s i n g l e p u l s e a v a l a n c h e e n e r g y e a s i a s = 1 6 a , l = 1 . 5 m h 1 8 5 m j d i o d e f o r w a r d v o l t a g e v s d i s = 1 6 a , v g s = 0 v , t j = 2 5 c 1 . 2 v a m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t p u l s e d s o u r c e c u r r e n t i s m i s 3 3 1 1 0 n h 4 . 5 7 . 5 i n t e r n a l d r a i n i n d u c t a n c e i n t e r n a l s o u r c e i n d u c t a n c e l d l s n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a v g s = 1 0 v , v d s = 5 0 v , i d = 1 6 a , r g = 5 . 1 i f = 1 6 a , d i / d t = 1 0 0 a / s , t j = 2 5 c v g s = 0 v , v d s = 2 5 v , f = 1 m h z v g s = 1 0 v , v d s = 8 0 v , i d = 1 6 a p f n c be t wee n lea d, 6mm (0.25in.) from package and center of die contact s d g s d g mosfet symbol showing t he integral reverse p-n junction diode. (note.1) (note.1) note.1: pulse width 400s; duty cycle 2%.
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t n- ch an n el m osf et irf 540ns ( k r f5 4 0 n s ) t y p i c a l ch a r a c te r i s i ti c s fig 4. normalized on-resistance vs. temperature fig 2 . typical output characteristics fig 1 . typical output characteristics fig 3 . typical transfer characteristics - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 t , ju n c ti o n t e m p e ra tu re ( c ) r , drain- t o- s our ce on re si st an c e (normali ze d ) j d s ( o n ) v = i = g s d 1 0 v 3 3 a 1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 2 0 s p u l s e w i d t h t = 2 5 c j t o p b o tt o m v g s 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v 4 . 5 v v , d r a i n - t o - s o u r c e v o l t a g e ( v ) i , drai n -t o -s o urc e curr e n t ( a ) d s d 4 . 5 v 1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 2 0 s p u l s e w i d t h t = 1 7 5 c j t o p b o t t o m v g s 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v 4 . 5 v v , d r a i n - to -s o u rce v o l ta g e (v ) i , drain-to-source current (a) d s d 4 . 5 v 1 0 1 0 0 1 0 0 0 4 . 0 5 . 0 6 . 0 7 . 0 8 . 0 9 . 0 v = 5 0 v 2 0 s p u l s e w i d t h d s v , g a t e - t o - s o u r c e v o l t a g e ( v ) i , d r a i n - t o - s o u r c e c u r r e n t ( a ) g s d t = 2 5 c j t = 17 5 c j fig 6 . typical gate charge vs. gate-to-source voltage fig 5 . typical capacitance vs. drain-to-source voltage 1 1 0 1 0 0 0 5 0 0 10 0 0 15 0 0 20 0 0 25 0 0 30 0 0 v , d r a i n - t o - s o u r c e v o l t a g e ( v ) c , cap a ci t ance (p f ) d s v c c c = = = = 0 v , c c c f = 1 m h z + c + c c s h o r t e d gs i s s g s g d , d s r s s g d o s s d s g d c i s s c o s s c r s s 0 2 0 4 0 6 0 8 0 0 4 8 1 2 1 6 2 0 q , t o t a l g a t e c h a r g e ( n c ) v , ga t e - to- s ou r c e vo lt ag e ( v ) g g s f o r t e s t c ir c u it s e e f ig u r e i = d 1 3 1 6 a v = 2 0 v d s v = 5 0 v d s v = 8 0 v d s
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . n- ch an n el m osf et irf 540ns ( k r f5 4 0 n s ) t y p i c a l ch a r a c te r i s i ti c s fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 0 . 1 1 1 0 1 0 0 10 0 0 0 . 2 0 . 6 1 . 0 1 . 4 1 . 8 v , s o u r c e - t o - d r a i n v o l t a g e ( v ) i , r e v e r s e d r ai n c u r r e n t ( a ) s d s d v = 0 v g s t = 25 c j t = 17 5 c j 1 1 0 1 0 0 10 0 0 v d s , d r a i n - t o s o u r c e v o l t ag e ( v ) 0 . 1 1 1 0 1 0 0 10 0 0 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 2 5 c t j = 17 5 c s i n g l e p u l s e 1 m s e c 1 0 m s e c o p era t i on i n t h i s a r e a l i m i t e d b y r d s ( o n ) 100 s e c fig 11. maximum effective transient thermal impedance, junction-to-case f ig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d( on ) t r t d( of f ) t f 1 0. 1 % + - 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 0 5 1 0 1 5 2 0 2 5 3 0 3 5 t , c a se t e m p e ra tu re ( c ) i , d rai n c urr en t ( a ) c d 0. 0 1 0 . 1 1 1 0 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0. 0 1 0 . 1 1 n o t e s : 1 . d u t y f a c t o r d = t / t 2 . pe a k t = p x z + t 1 2 j dm t h j c c p t t dm 1 2 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) t h e r m a l r espon s e ( z ) 1 thjc 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 d = 0 . 5 0 s i n g l e p u l se ( t h er m al r espo n se)
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t n- ch an n el m osf et irf 540ns ( k r f5 4 0 n s ) t y p i c a l ch a r a c te r i s i ti c s q g q gs q gd v g ch a rg e d. u. t . v ds i d i g 3ma v gs . 3 f 50k . 2 f 12v cur r ent regulat or same t y pe as d. u. t . cur r e n t samp l i n g r esi s t o r s + - t p v ( b r ) d s s i a s r g i a s 0 . 0 1 t p d . u . t l v d s + - v d d d r i v e r a 1 5 v 2 0 v 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 0 1 0 0 2 0 0 3 0 0 4 0 0 s t a r t i n g t , j u n c t i o n t e m p e r a t u r e ( c ) e , s ingl e p uls e av alanch e e nerg y (m j ) j a s i d t o p b o t t o m 6 .5 a 1 1. 3 a 1 6 a
s m d ty p e w w w . k exi n . co m . c n 6 m osf e t n- ch an n el m osf et irf 540ns ( k r f5 4 0 n s ) t y p i c a l ch a r a c te r i s i ti c s p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t . i sd w aveform d.u.t . v ds w aveform inductor curent d = p .w . period + - + + + - - - ? ? ? ? ? ? for n-channe l hexfet ? power mosfets
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